Energy harvest and storage device for semiconductor chips and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuen-Yi Chen, Yi Ching Ong, Kuo-Ching Huang, Harry-Hak-Lay Chuang
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Abstract
A semiconductor structure may be located over a substrate, and may include a parallel connection of a first component and a second component. The first component includes a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a metal-antiferroelectric-metal capacitor. The second component includes a battery structure. The semiconductor structure may be used as a combination of an energy harvesting device and an energy storage structure that utilizes heat from adjacent semiconductor devices or from other heat sources.
Claims20
A method of forming a semiconductor structure comprising an energy harvesting device and a battery structure within, or over, a substrate, the method comprising forming a layer stack on a substrate, wherein the layer stack includes, in a forward order or in a reverse order:
- a first battery electrode layer;
- an energy storage medium layer;
- a second battery electrode layer,
- a diode layer stack including a p-n junction or a p-i-n junction therein;
- a first capacitor electrode layer;
- a node dielectric layer that comprises a ferroelectric material layer or an antiferroelectric material layer;
- and
- a second capacitor electrode layer.
A method of forming a semiconductor structure, comprising:
- forming semiconductor devices on a semiconductor substrate;
- forming first metal interconnect structures embedded in first dielectric material layers, wherein the first metal interconnect structures are electrically connected to the semiconductor devices;
- forming a layer stack over the first dielectric material layers, wherein the layer stack includes, from bottom to top, a first battery electrode layer, an energy storage medium layer, a second battery electrode layer, a diode layer stack including a p-n junction or a p-i-n junction therein, a first capacitor electrode layer, a node dielectric layer that comprises a ferroelectric material layer or an antiferroelectric material layer, and a second capacitor electrode layer;
- and
- electrically connecting the second capacitor electrode layer to the first battery electrode layer.
A method of forming a semiconductor structure within, or over, a substrate, the method comprising:
- forming a layer stack including a combination of an energy harvesting device and a battery structure, wherein the layer stack includes, in a forward order or in a reverse order:
- a first battery electrode layer;
- an energy storage medium layer;
- a second battery electrode layer,
- a diode layer stack including a p-n junction or a p-i-n junction therein;
- a first capacitor electrode layer;
- a node dielectric layer that comprises a ferroelectric material layer or an antiferroelectric material layer;
- and
- a second capacitor electrode layer,
- wherein the method further comprises electrically connecting the second capacitor electrode layer to the first battery electrode layer.
Dependencies are inferred from the claim text.