Back to results
US 12,713,916 B2Granted
Resin-sealed semiconductor device
AssigneeMitsubishi Electric Corporation
InventorRyuichi Ishii
Life of this patent
Estimating the term…
Abstract
A resin-sealed semiconductor device is configured in such a way that a second bonding material has a melting point higher than that of a first bonding material made of a solder-bonding material, in such a way that one of bonding surfaces through which a power module and a cooling device are bonded to each other with the first bonding material is the other surface portion of a copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and in such a way that the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.
Claims20
A resin-sealed semiconductor device comprising:
- a power module;
- and
- a cooling device that is bonded to the power module with a first bonding material made of a solder-bonding material,
- wherein the power module includes
- a semiconductor element,
- a heat spreader on one surface portion of which the semiconductor element is mounted,
- a first lead frame that is an input/output terminal bonded to the heat spreader,
- a second lead frame that is a main terminal bonded to the semiconductor element through the intermediary of a second bonding material,
- a copper plate whose one surface portion is bonded to the other surface portion, of the heat spreader, that faces the one surface portion thereof, through the intermediary of a resin insulating layer, and
- a molding resin that seals the semiconductor element, the heat spreader, part of the first lead frame, part of the second lead frame, the resin insulating layer, and a portion of the copper plate, other than the other surface portion thereof that faces the one surface portion thereof,
- wherein the second bonding material is made of a bonding material having a melting point higher than that of the first bonding material,
- wherein one of bonding surfaces through which the power module and the cooling device are bonded to each other with the first bonding material is the other surface portion of the copper plate, and the other one of the bonding surfaces is a surface portion, at the power module side, of the cooling device, and
- wherein the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.
10 more elements
A resin-sealed semiconductor device comprising:
- a power module;
- and
- a cooling device that is bonded to the power module with a first bonding material made of a solder-bonding material,
- wherein the power module includes
- a semiconductor element,
- an insulated substrate on one surface portion of which the semiconductor element is mounted,
- a first lead frame that is an input/output terminal bonded to the insulated substrate,
- a second lead frame that is a main terminal bonded to the semiconductor element through the intermediary of a second bonding material, and
- a molding resin that seals the semiconductor element, a portion of the insulated substrate, other than the other surface portion thereof that faces the one surface portion thereof, part of the first lead frame, and part of the second lead frame,
- wherein the insulated substrate includes an insulating layer, an upper circuit that is provided on one surface portion of the insulating layer and on which the semiconductor element is mounted, and a lower circuit that is provided on the other surface portion, of the insulating layer, that faces the one surface portion thereof,
- wherein at least in the lower circuit out of the upper circuit and the lower circuit, the other surface portion thereof situated at a side opposite to one surface portion thereof that faces the insulating layer is formed of copper,
- wherein the other surface portion of the insulated substrate is formed of the other surface portion of the lower circuit,
- wherein the second bonding material is made of a bonding material having a melting point higher than that of the first bonding material,
- wherein one of bonding surfaces through which the power module and the cooling device are bonded to each other with the first bonding material is the other surface portion of the lower circuit in the insulated substrate, and the other one of the bonding surfaces is a surface portion, at the power module side, of the cooling device, and
- wherein the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.
12 more elements
Dependencies are inferred from the claim text.