Microchannel structures with buried structures
AssigneeHewlett-Packard Development Company, L.P.
InventorsMichael W. Cumbie, Chien-Hua Chen, Richard W. Seaver
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Abstract
A structure includes a plate layer formed of a first material and a plurality of heatsink structures vertically extending from the plate layer. Each of the plurality of heatsink structures includes a bottom structure disposed on the plate layer and formed of the first material, a buried structure disposed on the bottom structure and formed of a second material, and a top structure disposed on the buried structure and formed of the first material. A plurality of microchannels are formed between the plurality of heatsink structures.
Claims15
A microchannel structure comprising:
- a plate layer formed of a first material;
- and
- a plurality of heatsink structures vertically extending from the plate layer, each of the plurality of heatsink structures comprising:
- a bottom structure disposed on the plate layer and formed of the first material;
- a buried structure disposed on the bottom structure and formed of a second material, wherein the second material has etching selectivity with respect to the first material;
- and
- a top structure disposed on the buried structure and formed of the first material, wherein a plurality of microchannels are formed between the plurality of heatsink structures, and wherein the first material comprises silicon.
A structure comprising:
- a plate layer formed of a first material;
- and
- a plurality of heatsink structures vertically extending from the plate layer and formed of the first material, each of the plurality of heatsink structures comprising a buried structure disposed therein at a first distance from the plate layer, the buried structure formed of a second material, wherein the second material has etching selectivity with respect to the first material;
- wherein a plurality of microchannels are uniformly disposed between the plurality of heatsink structures, and wherein the first material comprises silicon.
A structure comprising:
- a plate layer formed of a first material;
- a buried layer disposed on the plate layer and formed of a second material, wherein the second material has etching selectivity with respect to the first material;
- a top layer disposed on the buried layer and formed of the first material;
- and
- a plurality of microchannels formed by etching of a portion of the plate layer, a portion of the buried layer, or a portion of the top layer,
- wherein one of a depth, a width, or a shape of the plurality of microchannels is substantially uniform across the plurality of microchannels, and wherein the first material comprises silicon.
Dependencies are inferred from the claim text.