Semiconductor device

A semiconductor device, comprising:

• a plurality of semiconductor chips;
• a first conductor and a second conductor arranged at opposite sides of the semiconductor chips, wherein the second conductor comprises a plurality of pillars, and wherein each of the semiconductor chips comprises:
• a first surface facing the first conductor;
• a first electrode arranged on the first surface and electrically coupled to the first conductor;
• a second surface opposite to the first surface;
• a second electrode arranged on the second surface and electrically coupled to a respective one of the pillars, and a control electrode arranged on the second surface and configured to switch a current flowing between the first electrode and the second electrode;
• a circuit board comprising openings penetrated by the plurality of pillars, wherein the circuit board further comprises an electrically insulating layer, a first conductive film and a second conductive film provided on opposite surfaces of the electrically insulating layer, and wherein the first conductive film is configured to form a first wiring pattern comprising first contact pads, and the second conductive film is configured to form a second wiring pattern comprising second contact pads;
• a plurality of electrical connectors which electrically connect the control electrodes of the semiconductor chips and respective ones of the first contact pads and are configured to apply a pressure against the circuit board;
• and
• a plurality of conductive spacers which are fixedly connected to either the second conductor or respective ones of the second contact pads, and wherein the second contact pads are electrically coupled, via the conductive spacers, to the second conductor by the pressure,
• wherein the second conductor comprises a conductive plate extending between at least some of the pillars, and the conductive plate comprises a planar surface facing the semiconductor chips, and
• wherein at least one of the conductive spacers has a surface which faces the conductive plate and is spaced apart from the planar surface of the conductive plate.

A method of manufacturing a semiconductor device, comprising:

• providing a plurality of semiconductor chips;
• arranging a first conductor and a second conductor at opposite sides of the semiconductor chips, wherein the second conductor comprises a plurality of pillars, and wherein each of the semiconductor chips comprises:
• a first surface facing the first conductor;
• a first electrode arranged on the first surface and electrically coupled to the first conductor;
• a second surface opposite to the first surface;
• a second electrode arranged on the second surface and electrically coupled to a respective one of the pillars, and a control electrode arranged on the second surface and configured to switch a current flowing between the first electrode and the second electrode;
• passing the plurality of pillars through openings of a circuit board, wherein the circuit board further comprises an electrically insulating layer, a first conductive film and a second conductive film provided on opposite surfaces of the electrically insulating layer, and wherein the first conductive film is configured to form a first wiring pattern comprising first contact pads, and the second conductive film is configured to form a second wiring pattern comprising second contact pads;
• using a plurality of electrical connectors to electrically connect the control electrodes of the semiconductor chips and respective ones of the first contact pads, and to apply a pressure against the circuit board;
• and
• providing a plurality of conductive spacers which are fixedly connected to either the second conductor or respective ones of the second contact pads, wherein the second contact pads are electrically coupled, via the conductive spacers, to the second conductor solely by the pressure.