Semiconductor device

A semiconductor device, comprising:

• a substrate including a first surface and a second surface opposite to each other;
• an active pattern on the first surface and extending in a first direction;
• a field insulating film on the first surface and on at least a portion of a side surface of the active pattern;
• a gate structure on the active pattern and the field insulating film and extending in a second direction intersecting the first direction;
• a through-contact extending in a third direction perpendicular to the first and second directions so as to extend through the field insulating film;
• a buried pattern in the substrate and contacting the through-contact;
• a backside wiring structure on the second surface and electrically connected to the buried pattern;
• and
• a heat-dissipating structure in the substrate and spaced apart from the buried pattern in the second direction, wherein the heat-dissipating structure is electrically insulated from the backside wiring structure.

A semiconductor device, comprising:

• a substrate including a first surface and a second surface opposite to each other;
• an active pattern on the first surface and extending in a first direction;
• a field insulating film on the first surface and on at least a portion of a side surface of the active pattern;
• a gate structure on the active pattern and the field insulating film and extending in a second direction intersecting the first direction;
• a source/drain area on a side surface of the gate structure and contacting the active pattern;
• a frontside wiring structure on the first surface and electrically connected to the source/drain area or the gate structure;
• a through-contact extending in a third direction perpendicular to the first and second directions so as to extend through the field insulating film;
• a buried pattern in the substrate and contacting the through-contact;
• a backside wiring structure on the second surface and electrically connected to the buried pattern;
• and
• a heat-dissipating structure in the substrate and spaced apart from the buried pattern in the second direction.