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US 12,713,892 B2Granted
Semiconductor device including interconnect structure with metal jump structure connecting adjacent metal lines
AssigneeSamsung Electronics Co., Ltd.
InventorsJaemyung Choi, Johnsoo Kim, Joongsuk Oh, Kang-Ill Seo
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Abstract
Provided is a semiconductor device which includes: a base layer; a 1st metal line extended in a 1st direction on the base layer; a 2nd metal line extended in the 1st direction, and adjacent to the 1st metal line at a same level, on the base layer; and a metal jumper, between the 1st metal line and the 2nd metal line, at the same level, wherein the metal jumper connects the 1st metal line and the 2nd metal line.
Claims14
A semiconductor device comprising:
- a base layer;
- a 1st metal line extending in a 1st direction on the base layer;
- a 2nd metal line extending in the 1st direction, and adjacent to the 1st metal line in a 2nd direction intersecting the 1st direction, at a same level as the 1st metal line in a 3rd direction intersecting the 1st direction and the 2nd direction, on the base layer;
- a metal jumper, between the 1st metal line and the 2nd metal line, at the same level;
- and
- a 1st contact liner between the metal jumper and at least one of the 1st metal line and the 2nd metal line,
- wherein the metal jumper electrically connects the 1st metal line and the 2nd metal line.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- etching an initial metal structure to form a 1st metal line and a 2nd metal line extending in a 1st direction and adjacent in a 2nd direction intersecting the 1st direction, at a same level;
- forming a dielectric layer between the 1st metal line and the 2nd metal line;
- forming a hard mask layer with an opening exposing the dielectric layer between the 1st metal line and the 2nd metal line;
- forming a recess in the dielectric layer between the 1st metal line and the 2nd metal line exposing a side surface of the 1st metal line and a side surface of the 2nd metal line, the recess having a smaller length than the 1st metal line or the 2nd metal line in the 1st direction;
- and
- forming a metal jumper in the recess such that the metal jumper electrically connects the 1st metal line and the 2nd metal line.
3 more elements
Dependencies are inferred from the claim text.