Substrate processing apparatus and substrate processing method
AssigneeTokyo Electron Limited
InventorTakumi Honda
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AssigneeTokyo Electron Limited
InventorTakumi Honda
Estimating the term…
A substrate processing apparatus etches a molybdenum film of a substrate having a device structure that includes, in a multistage manner, multilayer films including the molybdenum film. A processing tank retains therein etchant including acetic acid, phosphoric acid, nitric acid, and water as components. A controller is configured to: based on concentrations of the components, an amount of the etchant, a preliminarily-set target amount of the etchant, and preliminarily-set target concentrations of the respective components; decide a discharging amount of the etchant from the processing tank, and replenishing amounts of acetic acid, phosphoric acid, and nitric acid to the processing tank; control an open/close valve to discharge the decided discharging amount of the etchant from the processing tank; and control a supply unit to replenish the processing tank with the decided replenishing amounts of acetic acid, phosphoric acid, and nitric acid.
A substrate processing apparatus to etch a molybdenum film of a substrate having a device structure that includes, in a multistage manner, multilayer films including the molybdenum film, the apparatus comprising:
A substrate processing method for etching a molybdenum film of a substrate having a device structure that includes, in a multistage manner, multilayer films including the molybdenum film, the method comprising:
Dependencies are inferred from the claim text.