Semiconductor device and semiconductor manufacturing method thereof

A semiconductor manufacturing method, comprising:

• forming a first semiconductor element with a first bonding film, wherein the first bonding film is formed on a first side of the first semiconductor element, a width of the first semiconductor element is less than that of the first bonding film, and the first semiconductor element and the first bonding film are etched in an identical etching process to form the taper structure;
• forming a second semiconductor element with a second bonding film, wherein the second bonding film is formed on the second semiconductor element;
• bonding the first semiconductor element and the second semiconductor element by bonding the first bonding film and the second bonding film;
• and
• filling an oxide layer to surround the first semiconductor element and the first bonding film.

A semiconductor manufacturing method, comprising:

• forming a first semiconductor element with a first bonding film, wherein the first bonding film is formed on a first side of the first semiconductor element, a width of the first semiconductor element is gradually increased towards the first bonding film, and the first semiconductor element and the first bonding film are etched in an identical etching process to form the taper structure;
• forming a second semiconductor element with a second bonding film, wherein the second bonding film is formed on the second semiconductor element;
• bonding the first semiconductor element and the second semiconductor element by bonding the first bonding film and the second bonding film;
• and
• filling an oxide layer to surround the first semiconductor element and the first bonding film.