In situ acyclic diamino carbene (ADC) deposition
AssigneesApplied Materials, Inc., National University of Singapore
InventorsWei Chun Lim, Andrea Leoncini, Han Vinh Huynh, Sara Raquel Mota Merelo de Aguiar
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Abstract
Methods of selectively depositing a passivation layer on a metal surface of a semiconductor substrate are described. Exemplary methods may include exposing the semiconductor substrate having a metal surface and a non-metal surface to a first precursor to form a first portion of the passivation layer on the metal surface, the first precursor including an isonitrile. The exemplary methods may further include exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a second precursor to form the passivation layer on the metal surface. The second precursor may include an amine, an alcohol, or a thiol.
Claims20
A method of selectively depositing a passivation layer on a semiconductor substrate, the method comprising:
- exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a first precursor to form a first portion of the passivation layer on the metal surface, the first precursor comprising an isonitrile of general formula (I):
- wherein R1 comprises one or more of a linear alkyl, branched alkyl, cyclic alkyl, substituted or unsubstituted benzyl, silyl, and substituted or unsubstituted aryl groups;
- and
- exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a second precursor to form the passivation layer on the metal surface, the second precursor having a general formula (II):
- wherein R2 comprises one or more of a linear or branched C1-24 alkyl, substituted linear or branched C1-24 alkyl, substituted or unsubstituted C5-7 cyclic alkyl, and benzyl substituted with alkyl, alkoxy, or thio, and X comprises —NH—, —O—, or —S—.
A method of selectively depositing a passivation layer on a semiconductor substrate, the method comprising:
- a first process cycle comprising exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a first precursor to form a first portion of the passivation layer on the metal surface, the first precursor comprising an isonitrile of general formula (I):
- R1 comprising one or more of a linear alkyl, branched alkyl, cyclic alkyl, substituted or unsubstituted benzyl, silyl, and substituted or unsubstituted aryl groups and exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a second precursor to form the passivation layer on the metal surface, the second precursor having a general formula (II):
- R2 comprising one or more of a linear or branched C1-24 alkyl, substituted linear or branched C1-24 alkyl, substituted or unsubstituted C5-7 cyclic alkyl, and benzyl substituted with alkyl, alkoxy, or thio, and X comprising —NH—, —O—, or —S—;
- and
- repeating the first process cycle n number of times wherein n is an integer in a range of from 1 to 100 to form the metal layer saturated with the passivation layer.
Dependencies are inferred from the claim text.