Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorsArito Ogawa, Koei Kuribayashi
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Abstract
According to one aspect of a technique of the present disclosure, there is provided a substrate processing method including: (a) supplying a metal-containing gas to a substrate; (b) supplying a first reducing gas to the substrate; and (c) supplying a second reducing gas different from the first reducing gas to the substrate, wherein a metal-containing film is formed on the substrate by performing (a), (b) and (c) at least once.
Claims18
A substrate processing method comprising:
- (a) supplying a metal-containing gas containing molybdenum, oxygen and chlorine to a substrate;
- (b) supplying a gas constituted by hydrogen to the substrate;
- (c) supplying a gas, which is different from the gas constituted by hydrogen, containing hydrogen and an element other than hydrogen to the substrate;
- and
- (d) forming a metal-containing film on the substrate by performing (a), (b) and
- (c) at least once.
A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:
- (a) supplying a metal-containing gas containing molybdenum, oxygen and chlorine to a substrate;
- (b) supplying a gas constituted by hydrogen to the substrate;
- (c) supplying a gas, which is different from the gas constituted by hydrogen, containing hydrogen and an element other than hydrogen to the substrate;
- and
- (d) forming a metal-containing film on the substrate by performing (a), (b) and (c) performed at least once.
Dependencies are inferred from the claim text.