Display substrate, manufacturing method therefor, and display apparatus
AssigneesBeijing BOE Technology Development Co., Ltd., Boe Technology Group Co., Ltd.
InventorDong Li
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Abstract
Disclosed in the embodiments of the present disclosure are a display substrate, a manufacturing method therefor and a display device. The display substrate comprises a plurality of top-emitting quantum dot light-emitting devices, wherein each top-emitting quantum dot light-emitting device comprises: a first electrode and a second electrode arranged opposite to each other, a quantum dot light-emitting layer located between the first electrode and the second electrode, and an electron transport layer located between the first electrode and the quantum dot light-emitting layer; and a metal reflective layer is provided inside the electron transport layer.
Claims15
A display substrate comprising multiple top-emission quantum dot light-emitting devices, and each of the multiple top-emission quantum dot light-emitting devices comprising:
- a first electrode and a second electrode arranged opposite to each other;
- a quantum dot light-emitting layer between the first electrode and the second electrode;
- and
- an electron transport layer between the first electrode and the quantum dot light-emitting layer;
- wherein, a metal reflection layer is provided inside the electron transport layer;
- wherein the multiple top-emission quantum dot light-emitting devices comprise multiple top-emission quantum dot light-emitting devices with different emission wavelengths;
- and
- a distance between the metal reflection layer and the first electrode in each of the multiple top-emission quantum dot light-emitting devices is inversely correlated with an emission wavelength of the each of the multiple top-emission quantum dot light-emitting devices;
- wherein a proportion of oxygen vacancies on a surface of the electron transport layer in contact with the first electrode is less than a proportion of oxygen vacancies on a surface of the electron transport layer in contact with the metal reflection layer;
- and
- wherein a ratio of an area of the metal reflection layer to an area of the electron transport layer in each of the multiple top-emission quantum dot light-emitting devices ranges from 50% to 100%.
Dependencies are inferred from the claim text.