Indium tin oxide-fullerene-methylammonium tin iodide-rubidium germanium iodide-copper(I) oxide-gold (ITO-C60-MASnI3—RbGeI3—Cu2O—Au) based lead-free solar cell
AssigneePrince Mohammad Bin Fahd University
InventorsSyed M. Hasnain, M. Amin Mir
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Abstract
A lead-free solar cell includes, in the following order, a back metal contact layer including gold (Au), a hole transport layer (HTL) including copper oxide (Cu2O), an inorganic absorber layer including rubidium germanium iodide (RbGeI3), a perovskite absorber layer including methylammonium tin iodide (MASnI3), an electron transport layer (ETL) including C60, and a front contact layer including indium tin oxide (ITO). The solar cell achieves a current density (Jsc) of greater than or equal to 20 milliamperes per square centimeter (mA/cm2) at an open-circuit voltage (VOC) of 0.94 volts (V).
Claims6
A lead-free solar cell, including, in the following order:
- a back metal contact layer including gold (Au);
- a hole transport layer (HTL) including copper oxide (Cu2O);
- an inorganic absorber layer including rubidium germanium iodide (RbGeI3);
- a perovskite absorber layer including methylammonium tin iodide (MASnI3);
- an electron transport layer (ETL) including fullerene (C60);
- and
- a front contact layer including indium tin oxide (ITO);
- wherein the solar cell achieves a current density (Jsc) of greater than or equal to 30 milliamperes per square centimeter (mA/cm2) at an open-circuit voltage (VOC) of 0.94 volts (V), and
- wherein the ETL has a thickness of 0.03 μm, the perovskite absorber layer has a thickness of 0.4 μm, the inorganic absorber layer has a thickness of 0.4 μm, and the HTL has a thickness of 0.12 μm.
Dependencies are inferred from the claim text.