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US 12,713,758 B2Granted
Method for forming perovskite layer
AssigneeHanwha Solutions Corporation
InventorKwan Wook Jung
Life of this patent
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Abstract
The present invention relates to a method for forming a perovskite layer on a silicon layer, the method comprising the steps of: depositing a perovskite inorganic layer on the silicon layer through a vapor deposition process; and coating the inorganic layer with a perovskite organic layer through a solution process, wherein the inorganic layer is formed by sequentially or simultaneously depositing at least three inorganic halogen compounds including different halogen elements.
Claims8
A method of forming a perovskite layer on top of a silicon layer, the method comprising:
- depositing a perovskite inorganic layer on the top of the silicon layer by a vapor deposition process;
- and
- coating the top of the inorganic layer with a perovskite organic layer by a solution process,
- wherein the inorganic layer is formed by sequentially or simultaneously depositing three or more types of inorganic halogen compounds including different halogen elements.
1 more element
Dependencies are inferred from the claim text.