Display apparatus having an oxide semiconductor

A display apparatus comprising:

• a device substrate including a separating area between a hole area and a pixel area;
• an upper buffer layer disposed on the pixel area and the separating area of the device substrate;
• a first thin film transistor disposed on the pixel area of the device substrate, the first thin film transistor including a first semiconductor pattern on the upper buffer layer;
• a first gate insulating layer disposed on the upper buffer layer and covering the first semiconductor pattern;
• a second thin film transistor disposed on the pixel area of the device substrate, the second thin film transistor including a second semiconductor pattern on the first gate insulating layer;
• a second gate insulating layer disposed on the first gate insulating layer and covering the second semiconductor pattern;
• an interlayer insulating layer disposed on the second gate insulating layer and having an etch selectivity with the first gate insulating layer and the second gate insulating layer;
• and
• a light-emitting device disposed on the interlayer insulating layer and electrically connected to the second thin film transistor,
• wherein the first semiconductor pattern and the second semiconductor pattern include an oxide semiconductor,
• wherein the first gate insulating layer and the second gate insulating layer include fluorinated silicon nitride (SiNF), and
• wherein an end of the second gate insulating layer disposed on the separating area is closer to the pixel area than an end of the interlayer insulating layer disposed on the separating area.