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US 12,713,732 B2Granted
Light receiving element and infrared imaging device
AssigneeFujitsu Limited
InventorsKoji Tsunoda, Kazuo Ozaki
Life of this patent
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Abstract
A light receiving element includes a light receiving layer that includes a superlattice of an InAs layer and a GaSb layer, and an amorphous layer that covers a side wall surface of the light receiving layer. The amorphous layer contains In and As, and an amount of Ga and an amount of Sb contained in the amorphous layer are smaller than an amount of In and an amount of As contained in the amorphous layer.
Claims9
A light receiving element comprising:
- a light receiving layer that includes a superlattice of an InAs layer and a GaSb layer;
- and
- an amorphous layer that covers a side wall surface of the light receiving layer,
- wherein
- the amorphous layer contains In and As, and
- an amount of Ga and an amount of Sb contained in the amorphous layer are smaller than an amount of In and an amount of As contained in the amorphous layer.
3 more elements
Dependencies are inferred from the claim text.