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US 12,713,717 B2Granted
Image sensor and image processing device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDong Hyun Kim, Yong Sang Park, Hae Yong Park, Jong Eun Park, Kwan Sik Cho
Life of this patent
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Abstract
An image sensor includes a substrate having an element separation pattern, a first active region, and a ground region, the ground region being separated from the first active region by the element separation pattern, a transfer transistor including a transfer gate electrode on the first active region, the transfer gate electrode being separated from the ground region by the element separation pattern, a photo diode within the substrate, the photo diode being spaced apart from the transfer gate electrode, and a contact on the ground region, the contact being configured to receive a ground voltage.
Claims18
An image sensor, comprising:
- a substrate including:
- an element separation pattern,
- a first active region, and
- a ground region, the ground region being separated from the first active region by the element separation pattern;
- a transfer transistor including a transfer gate electrode on the first active region, the transfer gate electrode being separated from the ground region by the element separation pattern;
- a photo diode within the substrate, the photo diode being spaced apart from the transfer gate electrode;
- and
- a contact on the ground region, the contact being configured to receive a ground voltage,
- wherein:
- the substrate further includes a second active region separated from the first active region and the ground region by the element separation pattern, and
- the image sensor further includes a first transistor and a second transistor on the second active region, the first transistor and the second transistor being spaced apart from each other,
- the substrate further includes:
- a pixel separation pattern;
- and
- pixel regions separated by the pixel separation pattern, each of the pixel regions including a portion of the pixel separation pattern, the first active region, and the ground region, and
- the ground region or the first active region is in contact with the pixel separation pattern.
13 more elements
An image sensor, comprising:
- a substrate;
- a first pixel region on the substrate, the first pixel region including a first active region, a second active region, and a first ground region, and the first active region, the second active region, and the first ground region being separated from each other by a first element separation pattern;
- a first transfer transistor on the first active region, the first transfer transistor including a first transfer gate electrode at least partially extending into the substrate, and the first transfer gate electrode being separated from the first ground region by the first element separation pattern;
- a first photo diode within the substrate and spaced part from the first transfer gate electrode;
- a source follower transistor on the second active region, the source follower transistor including:
- a first end connected to a power supply voltage terminal, and
- a gate connected to a floating diffusion region;
- and
- a selection transistor on the second active region and spaced apart from the source follower transistor, the selection transistor including:
- a first end connected to a second end of the source follower transistor, and
- a contact on the first ground region, the contact being configured to receive a ground voltage,
- wherein the substrate further includes a pixel separation pattern,
- wherein the first pixel region includes a portion of the pixel separation pattern, and
- wherein the first ground region or the first active region is in contact with the pixel separation pattern.
11 more elements
An image processing device, comprising:
- an image sensor with pixel regions, each of the pixel regions having a photo diode configured to generate an electric charge from light, and to generate a pixel signal from the electric charge;
- and
- an image processor configured to generate an image data from the pixel signal,
- wherein the image sensor includes:
- a substrate having an element separation pattern, a first active region, and a ground region separated by the element separation pattern,
- a transfer transistor having a transfer gate electrode which at least partially extends into the substrate and overlaps the photo diode, and
- a contact on the ground region and configured to receive a ground voltage,
- wherein the element separation pattern surrounds the first active region or the ground region, and
- wherein the ground region is separated from the transfer gate electrode by the element separation pattern,
- wherein the substrate further includes a second active region separated from the first active region and the ground region by the element separation pattern,
- wherein the image sensor further includes a first transistor and a second transistor on the second active region, the first transistor and the second transistor being spaced apart from each other,
- wherein the substrate further includes a pixel separation pattern,
- wherein the pixel regions are separated by the pixel separation pattern, each of the pixel regions including a portion of the pixel separation pattern, and
- wherein the ground region or the first active region is in contact with the pixel separation pattern.
11 more elements
Dependencies are inferred from the claim text.