Back contact solar cell, method for manufacturing the same, and photovoltaic module

A photovoltaic module, comprising:

• at least one solar cell string, each formed by connecting a plurality of back-contact solar cells;
• a connecting member, configured to electrically connect two adjacent back-contact solar cells of the plurality of back-contact solar cells;
• an encapsulation film, configured to cover a surface of the at least one solar cell string;
• and
• a cover plate, configured to cover a surface of the encapsulation film that is away from the at least one solar cell string;
• wherein each of the plurality of back-contact solar cells includes:
• a substrate, including a plurality of first doped regions spaced apart along a first direction, a plurality of second doped regions arranged along the first direction, and gap regions, wherein at least a portion of each of the plurality of second doped regions is between respective adjacent first doped regions of the plurality of first doped regions, and a respective gap region of the gap regions is between each first doped region and an adjacent second doped region;
• first doped semiconductor layers, respectively formed on the plurality of first doped regions, wherein each of the plurality of first doped semiconductor layers includes a first doping element;
• second doped semiconductor layers, respectively formed on the plurality of second doped regions, wherein each of the plurality of second doped semiconductor layers includes a second doping element, and a conductive type of the second doping element is different from a conductive type of the first doping element;
• at least one conductive layer, wherein each respective conductive layer of the at least one conductive layer is formed on part of a corresponding gap region, wherein a first side of the respective conductive layer is in electrical contact with a respective first doped semiconductor layer, and an opposing second side of the respective conductive layer is in electrical contact with a respective second doped semiconductor layer adjacent to the respective first doped semiconductor layer;
• a passivation layer, formed over the first doped semiconductor layers, the second doped semiconductor layers, the at least one conductive layer and the gap regions;
• first electrodes in electrical contact with the first doped semiconductor layers;
• and
• second electrodes in electrical contact with the second doped semiconductor layers;
• wherein the respective conductive layer includes a first conductive layer and a second conductive layer, the first conductive layer is located on a side surface of the respective first doped semiconductor layer, the second conductive layer includes a first portion located on a top surface of the respective first doped semiconductor layer, a second portion abutting the first portion and located on a top edge of the first conductive layer, and a third portion abutting the second portion and protruding beyond the first conductive layer, a bottom surface of the third portion and a surface of the first conductive layer facing away from the side surface of the respective first doped semiconductor layer forming an acute angle and a recessed area in an outer surface of the respective conductive layer facing away from the respective first doped semiconductor layer.