Backside contact with full wrap-around contact

A backside power connection device, comprising:

• a back-end-of-line metallization layer on a carrier wafer;
• an interlevel dielectric layer on the back-end-of-line metallization layer;
• a source/drain contact in the interlevel dielectric layer, and in electrical contact with the back-end-of-line metallization layer;
• a source/drain electrically connected to the source/drain contact;
• a replacement metal gate structure electrically separated from the source/drain;
• a metal-silicide layer on the source/drain;
• a backside interlevel dielectric layer;
• and
• a backside conductive contact extending through an opening in the backside interlevel dielectric layer, the opening exposing a backside of the source/drain, the backside conductive contact being on and in electrical contact with the source/drain and the metal-silicide layer.

A method of forming a semiconductor device, the method comprising:

• forming a source/drain having a height, a length, and a width;
• and
• forming a full wrap-around contact surrounding at least a partial length of the source/drain, wherein forming the full wrap-around contact includes:
• forming a partial front-side wrap-around contact from a front side of a substrate;
• and
• forming a partial back-side wrap-around contact from a back side of the substrate directly on a backside surface of the source/drain.