Thin film transistor using oxide semiconductor, and semiconductor device including the same

A semiconductor device comprising:

• a substrate,
• an oxide semiconductor formed on the substrate,
• a first insulating film formed on the oxide semiconductor,
• a metal layer formed on the first insulating film
• a source electrode and a drain electrode electrically connected to the oxide semiconductor, and
• a second insulating film formed on the first insulating film and the metal layer,
• wherein the oxide semiconductor has a channel region corresponding to the metal layer, a source region adjacent to the channel region and electrically connected to the source electrode, and a drain region adjacent to the channel region and electrically connected to the drain electrode,
• a channel length of the channel region is 1.3 to 2.3 μm,
• a sheet resistance of the drain region and the source region is 1.4 KΩ/□to 20 KΩ/□,
• the first insulating film is a first silicon oxide film, and the drain region and the source region are covered with the first insulating film and are in contact with the first insulating film,
• the second insulating film includes a silicon nitride film formed on the first insulating film corresponding to the source region and the drain region, and a second silicon oxide film formed on the silicon nitride film,
• each of the drain region and the source region has an oxygen-deficient portion formed by ions doped by ion implantation, and
• the amount of hydrogen supplied from the silicon nitride film to the oxide semiconductor is less than the amount of hydrogen that can be taken into the oxygen-deficient regions.