Integrated circuit device

An integrated circuit device comprising:

• a plurality of fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, the plurality of fin-type active regions being apart from each other in a second horizontal direction that is perpendicular to the first horizontal direction;
• a plurality of source/drain regions arranged on each of the plurality of fin-type active regions;
• a device isolation film covering both sidewalls of each of the plurality of fin-type active regions;
• an insulating structure covering the plurality of source/drain regions and the device isolation film;
• a plurality of source/drain contacts arranged respectively on the plurality of source/drain regions to be apart from each other in the second horizontal direction, each of the plurality of source/drain contacts being connected to at least one of the plurality of source/drain regions;
• a via power rail passing through the insulating structure in a vertical direction and connected integrally with a first source/drain contact selected from the plurality of source/drain contacts;
• and
• a plurality of contact isolation insulating films, which are each arranged one-by-one between a pair of source/drain contacts adjacent to each other in the second horizontal direction from among the plurality of source/drain contacts, and which each have a lower surface that is closer to the substrate than a lower surface of each of the plurality of source/drain contacts,
• wherein at least one of the plurality of source/drain contacts comprises a first portion, which is arranged between one source/drain region selected from the plurality of source/drain regions and one contact isolation insulating film selected from the plurality of contact isolation insulating films in the second horizontal direction and extends in the vertical direction toward the substrate along a surface of the selected one contact isolation insulating film.

An integrated circuit device comprising:

• a plurality of fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, the plurality of fin-type active regions being apart from each other in a second horizontal direction that is perpendicular to the first horizontal direction;
• a pair of gate lines arranged over the plurality of fin-type active regions to extend lengthwise in the second horizontal direction;
• a plurality of source/drain regions between the pair of gate lines, the plurality of source/drain regions being respectively arranged one-to-one on the plurality of fin-type active regions;
• a device isolation film covering both sidewalls of each of the plurality of fin-type active regions;
• an insulating structure arranged between the pair of gate lines to cover the plurality of source/drain regions and the device isolation film;
• a plurality of source/drain contacts arranged respectively on the plurality of source/drain regions to be apart from each other in the second horizontal direction and having different cross-sectional shapes from each other in the second horizontal direction, each of the plurality of source/drain contacts being connected to at least one of the plurality of source/drain regions;
• a via power rail passing through the Insulating structure In a vertical direction and connected integrally with a first source/drain contact selected from the plurality of source/drain contacts;
• a power rail wiring line passing through the substrate and the device isolation film in the vertical direction and connected to the via power rail;
• and
• a contact isolation insulating film between two source/drain contacts adjacent to each other from among the plurality of source/drain contacts, the contact isolation insulating film having an uppermost surface, which is coplanar with an upper surface of each of the plurality of source/drain contacts, and a lowermost surface, which is closer to the substrate in the vertical direction than a lower surface of each of the plurality of source/drain contacts and farther from the substrate in the vertical direction than a lower surface of the via power rail,
• wherein a source/drain contact contacting the contact isolation insulating film from among the plurality of source/drain contacts comprises a first portion, which is arranged between one source/drain region selected from the plurality of source/drain regions and the contact isolation insulating film and extends in the vertical direction toward the substrate along a surface of the contact isolation insulating film.