Semiconductor device, method of manufacturing the semiconductor device, and electronic apparatus including the semiconductor device

A semiconductor device, comprising:

• a substrate;
• an active region extending vertically on the substrate, wherein the active region comprises a first source/drain layer, a channel layer and a second source/drain layer that are sequentially stacked;
• a hard mask layer formed on a top of the active region, wherein the hard mask layer has an outer peripheral sidewall substantially aligned with an outer peripheral sidewall of the channel layer in a vertical direction;
• and
• a gate stack formed around at least part of the outer peripheral sidewall of the channel layer, wherein the outer peripheral sidewall of the channel layer extends vertically, a sidewall of the gate stack closest to the channel layer is aligned with the outer peripheral sidewall of the channel layer, so as to occupy a same range in the vertical direction;
• wherein the gate stack comprises a gate dielectric layer and a gate conductor layer formed on the gate dielectric layer, and each of an end portion of the gate dielectric layer close to the channel layer and an end portion of the gate conductor layer close to the channel layer has a shape that gradually increases firstly and then gradually decreases in the vertical direction as getting close to a sidewall of the gate stack closest to the channel layer in a horizontal direction,
• wherein as getting close to the channel layer in the horizontal direction, each of a top surface of the gate conductor layer and a bottom surface of the gate conductor layer has a shape that gradually increases firstly and then gradually decreases in the vertical direction, and in a position where the gate stack is in contact with the channel layer, the gate conductor layer is aligned with the channel layer in the vertical direction;
• and
• wherein the gate conductor layer comprises a hollow structure.