Semiconductor memory device

A semiconductor memory device comprising:

• bit lines disposed on a substrate and extending in a first direction in parallel to each other;
• a hydrogen supply insulating layer including hydrogen and filling a space between the bit lines;
• a source pattern located on each of the bit lines and being in partial contact with the hydrogen supply insulating layer;
• a hydrogen diffusion barrier layer covering a top surface of the hydrogen supply insulating layer and being in contact with a side surface of the source pattern;
• a first channel pattern located on the source pattern;
• a first word line being adjacent to a side surface of the first channel pattern and crossing over the bit lines;
• and
• a landing pad on the first channel pattern,
• wherein a top surface of the first word line is located at a first level,
• wherein the landing pad includes a protruding portion which extends toward the first channel pattern in a vertical direction and has the same width as the first channel pattern in the first direction, and
• wherein a bottom surface of the protruding portion is located at a second level lower than the first level.

A semiconductor memory device comprising:

• bit lines disposed on a substrate and extending in a first direction in parallel to each other;
• a hydrogen supply insulating layer including hydrogen and filling a space between the bit lines;
• a source pattern located on each of the bit lines and being in partial contact with the hydrogen supply insulating layer;
• a hydrogen diffusion barrier layer covering a top surface of the hydrogen supply insulating layer and being in contact with a side surface of the source pattern;
• a first channel pattern located on the source pattern;
• a first word line being adjacent to a side surface of the first channel pattern and crossing over the bit lines;
• a landing pad on the first channel pattern;
• a second channel pattern which is located on the source pattern and is adjacent to the first channel pattern;
• and
• a second word line which is located between the first word line and the second channel pattern and is closer to the second channel pattern than the first word line in the first direction.