Semiconductor circuit
AssigneeOtowa Electric Co., Ltd.
InventorsTakatoshi Tojo, Minoru Tsukazaki, Naoyuki Tsukamoto, Shizuo Fujita
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Abstract
Provided is a semiconductor circuit capable of protecting a semiconductor device that operates at a low voltage from a harmful pulse. A semiconductor circuit included in the semiconductor device has a semiconductor element 1 including: a first n-type semiconductor layer; a metal layer; and a Schottky barrier between the first n-type semiconductor layer and the metal layer, wherein the semiconductor element 1 is in forward connection between a signal line of the semiconductor device and a ground.
Claims5
A semiconductor circuit comprised in a semiconductor device, the semiconductor circuit having a semiconductor element including:
- a first n-type semiconductor layer;
- a metal layer;
- and
- a Schottky barrier between the first n-type semiconductor layer and the metal layer, wherein
- the semiconductor element is in forward connection between a signal line of the semiconductor device and a ground, and
- the semiconductor element comprises, between the first n-type semiconductor layer and the metal layer, a second n-type semiconductor layer that is different in composition from the first n-type semiconductor layer and is larger in bandgap than the first n-type semiconductor layer.
Dependencies are inferred from the claim text.