Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong Heo, Taehwan Moon, Hagyoul Bae, Seunggeol Nam, Sangwook Kim, Kwanghee Lee
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Abstract
A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
Claims18
A semiconductor device, comprising:
- a first electrode;
- a second electrode isolated from direct contact with the first electrode;
- a ferroelectric layer;
- a conductive metal oxide layer;
- and
- a semiconductor layer,
- wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between the first electrode and the second electrode,
- wherein the conductive metal oxide layer is directly between the ferroelectric layer and the semiconductor layer such that the conductive metal oxide layer includes a metal oxide material that is in direct contact with both the ferroelectric layer and the semiconductor layer,
- wherein the second electrode includes at least one of a metal nitride or a metal oxide, and the semiconductor layer is in direct contact with the at least one of the metal nitride or the metal oxide of the second electrode, and
- wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer each independently have a thickness between about 0.1 nm and about 20 nm.
A semiconductor device, comprising:
- a first electrode;
- a second electrode isolated from direct contact with the first electrode;
- a ferroelectric layer;
- a conductive metal oxide layer;
- and
- a semiconductor layer,
- wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between the first electrode and the second electrode,
- wherein the conductive metal oxide layer is directly between the ferroelectric layer and the semiconductor layer such that the conductive metal oxide layer includes a metal oxide material that is in direct contact with both the ferroelectric layer and the semiconductor layer,
- wherein the semiconductor layer is in direct contact with the second electrode, the second electrode including at least one of a metal nitride or a metal oxide, and
- wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer include a same kind of metal oxide.
A semiconductor apparatus, comprising:
- a stack structure in which a plurality of insulating layers and a plurality of first electrodes are alternately and repeatedly stacked in a vertical direction;
- and
- a cell string including a ferroelectric layer, a conductive metal oxide layer, a semiconductor layer, and a second electrode,
- wherein the cell string penetrates the stack structure in the vertical direction,
- wherein, in the cell string, the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between a first electrode of the plurality of first electrodes and the second electrode,
- wherein the conductive metal oxide layer is directly between the ferroelectric layer and the semiconductor layer such that the conductive metal oxide layer includes a metal oxide material that is in direct contact with both the ferroelectric layer and the semiconductor layer,
- wherein the second electrode includes at least one of a metal nitride or a metal oxide, and the semiconductor layer is in direct contact with the at least one of the metal nitride or the metal oxide of the second electrode, and
- wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer each independently have a thickness between about 0.1 nm and about 20 nm.
Dependencies are inferred from the claim text.