Semiconductor device and method of manufacturing the same
AssigneeKioxia Corporation
InventorHiroshi Nakaki
Life of this patent
Estimating the term…
Abstract
In one embodiment, a semiconductor device includes a first substrate, and a plurality of electrode layers provided above the first substrate and stacked in a first direction. The device further includes a first semiconductor layer extending in the first direction in the plurality of electrode layers, and a metal layer provided above an uppermost one of the plurality of electrode layers and extending to cross the first direction. The device further includes a second semiconductor layer including an impurity diffusion layer that is provided between the first semiconductor layer and the metal layer, electrically connects the first semiconductor layer with the metal layer, and has an impurity concentration higher than an impurity concentration of the first semiconductor layer.
Claims10
A semiconductor device comprising:
- a first substrate;
- a stacked body including a plurality of electrode layers that are provided above the first substrate and are stacked in a first direction;
- a plurality of bit lines provided between the first substrate and a lowermost electrode layer among the plurality of electrode layers in the first direction, and each extending to cross the first direction;
- a plurality of columnar portions, each of which extends in the first direction in the plurality of electrode layers and includes a first semiconductor layer;
- a second semiconductor layer provided to contact the first semiconductor layer in each of the plurality of columnar portions;
- and
- a conductive layer provided above an uppermost electrode layer among the plurality of electrode layers, extending to cross the first direction, and annularly surrounding the second semiconductor layer,
- wherein the second semiconductor layer includes an impurity diffusion layer that has an impurity concentration higher than an impurity concentration of the first semiconductor layer.
Dependencies are inferred from the claim text.