Device for thermal conduction and electrical isolation
AssigneeNitride Global Inc.
InventorJason Schmitt
Life of this patent
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Abstract
The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AlON), aluminum oxyhydronitride (AlHON), aluminum oxycarbonitride (AlCON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AlSi, C—Al, W—Cu, or Ti.
Claims30
A method for forming an insulated metal substrate with a metal rich surface, the method comprising:
- cleaning a copper (Cu) substrate;
- lapping the Cu substrate;
- electropolishing the Cu substrate;
- forming a 10 μm aluminum oxynitride (AlON) layer on the Cu substrate;
- forming a 0.05 μm Cu rich AlON layer on the 10 μm AlON layer;
- laser etching a 0.05 μm deep pattern;
- and
- etching to remove excess Al.
A method for forming an insulated metal substrate with a metal rich surface, the method comprising:
- cleaning a copper (Cu) substrate;
- lapping the Cu substrate;
- electropolishing the Cu substrate;
- forming an aluminum oxynitride (AlON) layer of less than 200 μm on the Cu substrate;
- and,
- forming a Cu rich AlON layer on the AlON layer.
Dependencies are inferred from the claim text.