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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorValentin Gherman
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A device and a method for reading a code word in a resistive memory protected by an ECC where each memory cell includes resistive devices for storing a bit of a code word. The method allows the selection, as a function of the value of a syndrome, of a corrected word following a first decoding process without inversion of weak-bits or of a corrected word following a second decoding process with inversion of weak-bits. If the computed syndrome determines that the first decoding process has indicated an uncorrectable error or determines that the second decoding process has indicated neither an uncorrectable error nor an n-error (i.e., a maximum of n erroneous bits per code word), the selected word is the corrected word with inversion of the weak-bits. Otherwise, the selected word is the corrected word without inversion of the weak-bits.
A device for reading a code word stored in a resistive memory where each memory cell comprises resistive devices for storing a bit of a code word, the reading device comprising:
A method for reading a code word stored in a resistive memory where each memory cell comprises resistive devices for storing a bit of a code word, the method comprising at least the following steps of:
Dependencies are inferred from the claim text.