Embedded capacitors with buried metal layer underneath bulk acoustic wave resonator for electromechanical coupling coefficient control

Abstract

Aspects and embodiments disclosed herein include a film bulk acoustic wave resonator comprising a substrate including a layer of dielectric material disposed on an upper surface of the substrate, a layer of piezoelectric material, a top electrode disposed on a top surface of the layer of piezoelectric material, a bottom electrode disposed on a bottom surface of the layer of piezoelectric material, a cavity defined between a lower surface of the bottom electrode and an upper surface of the layer of dielectric material, and a layer of conductive material buried within the layer of dielectric material at least partially beneath the cavity and the bottom electrode.

Dependencies are inferred from the claim text.