Multi-mode broadband low noise amplifier
AssigneeSkyworks Solutions, Inc.
InventorsAravind Kumar Padyana, Rimal Deep Singh, Junhyung Lee, Bipul Agarwal
Life of this patent
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Abstract
Multi-mode broadband low noise amplifiers (LNAs) are disclosed herein. In certain embodiments, an LNA includes a first amplification stage and a second amplification stage having a lower gain than the first amplification stage. The LNA is operable in a plurality of operating modes including a first mode in which the first amplification stage and the second amplification stage operate in a cascade to amplify a radio frequency (RF) receive signal, and a second mode in which the first amplification stage amplifies the RF receive signal and the second amplification stage is bypassed.
Claims20
A low noise amplifier comprising:
- an input terminal configured to receive a radio frequency receive signal;
- an output terminal configured to output an amplified radio frequency receive signal;
- an input amplification stage including a first gain transistor having a gate connected to the input terminal, a second gain transistor having a gate connected to the input terminal and a source connected to a source of the first gain transistor, a first selection transistor having a source connected to a drain of the first gain transistor, a second selection transistor having a source connected to a drain of the second gain transistor, and a cascode transistor having a source connected to a drain of the first selection transistor and to a drain of the second selection transistor;
- an output amplification stage having an input connected to a drain of the cascode transistor and an output connected to the output terminal;
- and
- an output stage bypass switch connected between the drain of the cascode transistor and the output terminal, the low noise amplifier operable in a first gain mode in which the output stage bypass switch is turned off, and a second gain mode in which the output stage bypass switch is turned on to bypass the output amplification stage.
A packaged module comprising:
- a package substrate;
- and
- a semiconductor die attached to the package substrate, the semiconductor die including a low noise amplifier that includes an input terminal configured to receive a radio frequency receive signal, an output terminal configured to output an amplified radio frequency receive signal, and an input amplification stage including a first gain transistor having a gate connected to the input terminal, a second gain transistor having a gate connected to the input terminal and a source connected to a source of the first gain transistor, a first selection transistor having a source connected to a drain of the first gain transistor, a second selection transistor having a source connected to a drain of the second gain transistor, and a cascode transistor having a source connected to a drain of the first selection transistor and to a drain of the second selection transistor, the low noise amplifier further including an output amplification stage having an input connected to a drain of the cascode transistor and an output connected to the output terminal, and an output stage bypass switch connected between the drain of the cascode transistor and the output terminal, the low noise amplifier operable in a first gain mode in which the output stage bypass switch is turned off, and a second gain mode in which the output stage bypass switch is turned on to bypass the output amplification stage.
A wireless device comprising:
- an antenna configured to generate a radio frequency receive signal in response to a radio wave;
- and
- a front end system including a low noise amplifier that includes an input terminal configured to receive the radio frequency receive signal, an output terminal configured to output an amplified radio frequency receive signal, and an input amplification stage including a first gain transistor having a gate connected to the input terminal, a second gain transistor having a gate connected to the input terminal and a source connected to a source of the first gain transistor, a first selection transistor having a source connected to a drain of the first gain transistor, a second selection transistor having a source connected to a drain of the second gain transistor, and a cascode transistor having a source connected to a drain of the first selection transistor and to a drain of the second selection transistor, the low noise amplifier further including an output amplification stage having an input connected to a drain of the cascode transistor and an output connected to the output terminal, and an output stage bypass switch connected between the drain of the cascode transistor and the output terminal, the low noise amplifier operable in a first gain mode in which the output stage bypass switch is turned off, and a second gain mode in which the output stage bypass switch is turned on to bypass the output amplification stage.
Dependencies are inferred from the claim text.