PEALD titanium nitride with direct microwave plasma
AssigneeApplied Materials, Inc.
InventorsHanhong Chen, Arkaprava Dan, Joseph AuBuchon, Kyoung Ha Kim, Philip A. Kraus
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Abstract
A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.
Claims7
A method of depositing titanium nitride, the method comprising sequentially exposing a substrate surface to a titanium precursor and a direct microwave plasma generated from a plasma gas by one or more microwave sources, wherein a distance between the one or more microwave sources and the substrate surface is less than or equal to 50 mm.
Dependencies are inferred from the claim text.