Charged particle beam device and imaging method
AssigneeHitachi High-Tech Corporation
InventorsToshiyuki Yokosuka, Hideyuki Kotsuji, Hajime Kawano
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Abstract
A charged particle beam device for irradiating a sample arranged in a sample chamber to be observed with an electron beam includes: a plasma generation device to which a bias voltage is applicable to generate plasma containing charged particles for applying charges onto a side wall of a pattern of the sample; and a guide that guides the charged particles in the plasma generated by the plasma generation device to the pattern of the sample.
Claims13
A charged particle beam device for irradiating a sample arranged in a sample chamber to be observed with a charged particle beam, the charged particle beam device comprising:
- a plasma generation device to which a bias voltage is applicable to generate plasma containing charged particles for applying charges onto a side wall of a pattern of the sample;
- a guide that guides the charged particles in the plasma generated by the plasma generation device to the pattern of the sample;
- and
- a radio frequency power supply that applies a radio frequency bias voltage to the sample when the charged particles in the plasma are guided to the pattern of the sample.
An imaging method comprising:
- applying a bias voltage to a plasma generation device that generates plasma such that plasma is generated by the plasma generation device;
- emitting charged particles in the plasma generated by the plasma generation device to a sample via a guide to charge a side wall of a pattern of the sample;
- and
- irradiating the charged sample with a charged particle beam to detect and image secondary electrons emitted from the sample;
- and
- applying a radio frequency bias voltage to the sample using a radio frequency power supply when the charged particles in the plasma are guided to the pattern of the sample.
Dependencies are inferred from the claim text.