Variable resistance for current control in nonvolatile memory arrays

A method, comprising:

• receiving a plurality of addresses corresponding to a plurality of locations in a cross-point Magnetoresistive Random Access Memory (MRAM) structure that includes word lines extending along a first direction and bit lines extending along a second direction that is perpendicular to the first direction;
• setting a plurality of variable resistors, the variable resistors connected in series with selected nonvolatile memory cells at the locations and in series with word lines and bit lines connected to the selected nonvolatile memory cells, each variable resistor set to a respective resistance value that depends on a location of a selected nonvolatile memory cell with which it is connected such that, for each location, the sum of resistance of the connected word line, bit line and the variable resistor is within a predetermined range;
• and
• driving memory access currents through the selected nonvolatile memory cells in series with connected word and bit lines and the variable resistors.