Dual-read data integrity scan in a memory sub-system

A method comprising:

• performing a first data integrity scan on a block of a memory device to determine a first combined reliability statistic of memory cells in the block associated with a first program level and a second program level;
• performing, using a predetermined read level offset corresponding to one of the first program level or the second program level, a second data integrity scan on the block of the memory device to determine a second combined reliability statistic of the memory cells in the block associated with the first program level and the second program level, wherein performing the second data integrity scan comprises applying a modified first read voltage to memory cells corresponding to the first program level and applying an unmodified second read voltage to memory cells corresponding to the second program level;
• determining a difference between the first combined reliability statistic and the second combined reliability statistic, wherein the difference is attributable to the first program level;
• and
• responsive to the difference between the first combined reliability statistic and the second combined reliability statistic satisfying a threshold criterion, performing a corrective action on the block of the memory device.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• performing a first data integrity scan on a block of a memory device to determine a first combined reliability statistic of memory cells in the block associated with a first program level and a second program level;
• performing, using a predetermined read level offset corresponding to one of the first program level or the second program level, a second data integrity scan on the block of the memory device to determine a second combined reliability statistic of the memory cells in the block associated with the first program level and the second program level, wherein performing the second data integrity scan comprises applying a modified first read voltage to memory cells corresponding to the first program level and applying an unmodified second read voltage to memory cells corresponding to the second program level;
• determining a difference between the first combined reliability statistic and the second combined reliability statistic, wherein the difference is attributable to the first program level;
• and
• responsive to the difference between the first combined reliability statistic and the second combined reliability statistic satisfying a threshold criterion, performing a corrective action on the block of the memory device.