Wordline group-based identification of good memory blocks during a programming operation

A method comprising:

• receiving a request to execute a programming operation to program a target portion of a memory array of a memory device;
• in response to the request, identifying a target wordline group associated with the target portion of the memory array;
• identifying information associated with the target wordline group, wherein the information identifies a first good portion of the target wordline group and address information associated with a second bad portion of the target wordline group;
• and
• causing execution of the programming operation to program the first good portion of the target wordline group and using the address information associated with the second bad portion to selectively skip programming of the second bad portion of the target wordline group during the programming operation.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• receiving a request to execute a programming operation to program a target portion of a memory array of a memory device;
• in response to the request, identifying a target wordline group associated with the target portion of the memory array;
• identifying information associated with the target wordline group, wherein the information identifies a first good portion of the target wordline group and address information associated with a second bad portion of the target wordline group;
• and
• causing execution of the programming operation to program the first good portion of the target wordline group and using the address information associated with the second bad portion to selectively skip programming of the second bad portion of the target wordline group during the programming operation.