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US 12,710,607 B2Granted
Photonic semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Jiun Yi Wu
Life of this patent
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Abstract
A method includes forming a first redistribution structure on a first substrate; forming a waveguide structure on a second substrate, wherein the waveguide structure includes waveguides; bonding the waveguide structure to the redistribution structure using dielectric-to-dielectric bonding; removing the second substrate; forming a second redistribution structure on the waveguide structure; and connecting a photonic package to the second redistribution structure, wherein the photonic package is optically coupled to the waveguides.
Claims20
A method comprising:
- forming a first redistribution structure on a first substrate;
- forming a waveguide structure on a second substrate, wherein the waveguide structure comprises a plurality of waveguides in a plurality of dielectric layers, wherein the waveguide structure is free of metal features;
- bonding the waveguide structure to the first redistribution structure using dielectric-to-dielectric bonding;
- removing the second substrate;
- after removing the second substrate, forming a plurality of metal features in the waveguide structure;
- forming a second redistribution structure on the waveguide structure;
- and
- connecting a photonic package to the second redistribution structure, wherein the photonic package is optically coupled to the plurality of waveguides.
5 more elements
A method comprising:
- forming a first interposer, comprising:
- forming a plurality of first waveguides over a first substrate;
- forming a first dielectric layer over the plurality of first waveguides;
- after forming the first dielectric layer, annealing the plurality of first waveguides;
- and
- bonding the first dielectric layer to a first redistribution structure;
- and
- connecting a die to the first interposer, wherein the die is electrically coupled to the first redistribution structure and optically coupled to the plurality of first waveguides.
5 more elements
A package comprising:
- an interconnect structure, wherein the interconnect structure comprises:
- a first metallization layer on a substrate, the first metallization layer comprising at least one first conductive line;
- a first bonding layer over the first metallization layer;
- a second bonding layer bonded to the first bonding layer;
- a waveguide layer on the second bonding layer, the waveguide layer comprising at least one waveguide, wherein at least one waveguide of the waveguide layer overlaps at least one first conductive line of the first metallization layer;
- and
- a second metallization layer over the waveguide layer, wherein the second metallization layer is electrically connected to the first metallization layer through the first bonding layer and the second bonding layer;
- and
- a first device over the second metallization layer, wherein the first device comprises a photonic component that is optically coupled to the waveguide layer, wherein the first device is electrically connected to the second metallization layer.
6 more elements
Dependencies are inferred from the claim text.