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US 12,710,606 B2Granted
Heterogeneous packaging integration of photonic and electronic elements
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsStefan Rusu, Weiwei Song, Mohammed Rabiul Islam
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Abstract
Heterogeneous packaging integration of photonic and electronic elements is described herein. In one embodiment, a disclosed package includes: a package substrate; a first layer comprising an electronic die on the package substrate; and a second layer comprising a photonic die. The second layer is bonded onto the first layer such that the photonic die is bonded onto the electronic die.
Claims20
A method for forming a semiconductor device, comprising:
- forming a first layer comprising an electronic die and a bottom die;
- forming a second layer comprising a photonic die and a top die, wherein the electronic die comprises at least one driver for the photonic die;
- bonding the second layer onto the first layer to generate a bonded stack, wherein the photonic die is bonded onto the electronic die with hybrid bonds, which comprise dielectric-to-dielectric bonds and metal-to-metal bonds;
- and
- mechanically and electrically attaching the bonded stack onto a package substrate using conductive bumps, wherein the first layer is attached to the package substrate with the conductive bumps.
2 more elements
A method for forming a semiconductor device, comprising:
- forming a first layer, comprising an electronic die and a bottom die, over a substrate;
- and
- forming a second layer on the first layer, wherein the second layer comprises a photonic die and a top die,
- wherein the top die comprises a first component configured to operate at a first operation frequency, and the bottom die comprises a second component configured to operate at a second operation frequency that is lower than the first operation frequency.
1 more element
A method for forming a semiconductor device, comprising:
- forming a first layer by performing operations comprising:
- determining a first geometric pattern from a first photomask based on photolithography;
- etching a first silicon substrate to determine first etched regions based on the first geometric pattern;
- and
- epitaxially growing one or more first semiconductor materials in the first etched regions to form an electronic die and a bottom die that comprises analog and chipset functions in the first layer;
- forming a second layer by performing operations comprising:
- determining a second geometric pattern from a second photomask based on photolithography;
- etching a second silicon substrate to determine second etched regions based on the second geometric pattern;
- and
- epitaxially growing one or more second semiconductor materials in the second etched regions to form a photonic die and a top die with computing elements;
- and
- bonding the second layer onto the first layer in a face-to-face orientation to generate a bonded stack, wherein the photonic die is bonded onto the electronic die with hybrid bonds.
9 more elements
Dependencies are inferred from the claim text.