Photonic semiconductor device, photonic semiconductor package using the same and manufacturing method thereof

A manufacturing method of a photonic semiconductor device, comprising:

• providing a light-emitting component, wherein the light-emitting component comprises a gain medium layer and a first optical coupling layer having a first taper portion, the gain medium layer has a coupling portion, and the first taper portion protrudes with respect to the coupling portion;
• providing a photonic integrated circuit, wherein the photonic integrated circuit comprises a second taper portion;
• and
• disposing the light-emitting component on the photonic integrated circuit, wherein the light-emitting component and the photonic integrated circuit are stacked in a stacking direction, and the first taper portion and the second taper portion overlap in the stacking direction;
• wherein in providing the photonic integrated circuit, the photonic integrated circuit comprises a FEOL circuit layer having a recess;
• the manufacturing method further comprises:
• forming an insulation layer to encapsulate the light-emitting component;
• in disposing the light-emitting component on the photonic integrated circuit, a portion of the insulation layer is located within the recess of the photonic integrated circuit.

A manufacturing method of a photonic semiconductor device, comprising:

• providing a light-emitting component, wherein the light-emitting component comprises a gain medium layer, a P-type contact, a N-type contact and a waveguide layer having a first taper portion, the gain medium layer has a coupling portion, the first taper portion protrudes with respect to the coupling portion, and the P-type contact and the N-type contact are disposed on the opposite two sides of the waveguide layer;
• providing a photonic integrated circuit, wherein the photonic integrated circuit comprises a second taper portion;
• and
• disposing the light-emitting component on the photonic integrated circuit, wherein the light-emitting component and the photonic integrated circuit are stacked in a stacking direction, and the first taper portion and the second taper portion overlap in the stacking direction;
• wherein in providing the photonic integrated circuit, the photonic integrated circuit comprises a FEOL circuit layer having a recess;
• the manufacturing method further comprises:
• forming an insulation layer to encapsulate the light-emitting component;
• in disposing the light-emitting component on the photonic integrated circuit, a portion of the insulation layer is located within the recess of the photonic integrated circuit.