Method of measuring contact angle of silicon wafer and method of evaluating surface condition of silicon wafer

Abstract

A method of measuring the contact angle of a silicon wafer according to the present disclosure can detect differences in the severe hydrophilicity level of the silicon wafer surface, such differences not being detectable by contact angle measurement using pure water. The method of measuring a contact angle of a silicon wafer includes dripping a droplet on a surface of a silicon wafer, and measuring a contact angle of the surface of the silicon wafer from an image of the droplet. The droplet includes an aqueous solution having a surface tension greater than a surface tension of pure water.

Dependencies are inferred from the claim text.