Self heating extraction design and methodology with power consumption correction

A computer-implemented method for determining a semiconductor transistor device characteristic comprising:

• operatively connecting a sensor device to a first semiconductor transistor heater device and a second semiconductor transistor device situated adjacent said first semiconductor transistor heater device, said first semiconductor transistor heater device having a drain region, a source region, the drain region and source region defining a device channel therebetween, the drain, source and gate regions configured to receive an electrical stimulus to place said first semiconductor transistor heater device in an on or off state;
• and the second semiconductor transistor device situated adjacent and electrically connected to the first semiconductor transistor heater device, wherein the first semiconductor transistor heater device is a first FET device and said second semiconductor transistor device is a second FET device, said drain region of said first semiconductor transistor device comprising:
• a first drain region having a first drain contact via structure formed thereon, and
• a second drain region, said first drain region and second drain region of said first semiconductor transistor device being separated by a dummy gate therebetween, and said first drain region and second drain region being electrically connected by first embedded one or more semiconductor nanosheet channel layers that are each surrounded by a dielectric material layer and suspended through said dummy gate and electrically connect the first drain region to the second drain region;
• and
• said source region of the first semiconductor transistor heater device comprising a source region common to both said first and second FET devices, said source region having a second contact via structure formed atop the common source region, the second semiconductor transistor device further comprising:
• a further drain region having a third contact via structure formed thereon, the further drain region separated from said common source region and corresponding second contact via structure, said further drain region and common source region of said adjacent second semiconductor transistor device being separated by a further gate region therebetween, and said further drain region and common source region being electrically connected by second embedded one or more semiconductor nanosheet channel layers that are each surrounded by a dielectric material layer and suspended through said further gate region and electrically connect the further drain region to the common source region;
• said second drain region having a fourth contact via structure formed atop the second drain region;
• and
• wherein said sensor device is a four-terminal Kelvin sensor structure operatively connected to said first semiconductor transistor heater device, said Kelvin sensor structure having first and second Kelvin terminals operable to connect to said first contact via and second contact via structures and applying voltage between said first drain region and said common source region for placing said first semiconductor transistor heater device in an on or off state, and having third and fourth kelvin terminals operable to connect to said third contact via and fourth contact via structures to measure the electrical characteristic between said second drain contact structure formed atop the second drain region and the further drain contact structure formed atop the further drain region;
• configuring the sensor device to apply an electrical stimulus to one or more said drain contact, source contact or gate region for placing said first semiconductor transistor heater device in an on or off state;
• and
• measuring an electrical characteristic of said defined device channel of said first semiconductor transistor heater device while said first semiconductor transistor heater device is in said on or off state, said electrical characteristic used to correlate temperature to a corrected power consumption impact from first semiconductor transistor heater device, wherein the Kelvin sensor structure obtains an electrical characteristic measurement that excludes a metal/contact resistance drop.