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US 12,709,796 B2Granted
Methods of filling a recessed feature on a substrate employing metal sequential infiltration synthesis processes
AssigneeASM IP Holding B.V.
InventorKrzysztof Kamil Kachel
Life of this patent
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Abstract
Methods for filling a recessed feature on a substrate employing metal sequential infiltration synthesis processes are disclosed. The disclosed methods include forming an organic layer within a recessed feature and introducing metal species into the organic layer to allow the formation of a metal seed layer. A bulk metal layer can subsequently be formed from the metal seed layer to fill the recessed feature.
Claims20
A method of filling a recessed feature on a substrate, the method comprising:
- seating the substrate including the recessed feature within a reaction chamber, the recessed feature comprising a sidewall surface, a top surface, and a bottom surface, wherein the bottom surface comprises a first material and the sidewall surface comprises a second material different from the first material;
- selectively forming an organic layer on the first material relative to the second material;
- performing a metal sequential infiltration synthesis process to introduce metal species into the organic layer thereby forming a metal infiltrated layer;
- removing organic components of the metal infiltrated layer thereby forming a metal seed layer on the bottom surface;
- and
- forming a bulk metal layer directly on the metal seed layer, wherein the bulk metal layer fills the recessed feature.
3 more elements
A method of bottom-up gap filling of a recessed feature on a substrate, the method comprising:
- seating the substrate including the recessed feature within a reaction chamber, the recessed feature including a bottom surface comprising a silicon germanium layer and a sidewall surface comprising a silicon layer;
- passivating the sidewall surface comprising the silicon layer by introducing a passivating agent into the reaction chamber;
- depositing an organic layer on the silicon germanium layer disposed at the bottom surface of the recessed feature;
- performing at least one infiltration cycle of a sequential infiltration synthesis (SIS) sequence to introduce metal species into the organic layer thereby forming a metal infiltrated layer, wherein each infiltration cycle comprises introducing a metal precursor containing the metal species into the reaction chamber, the metal species selected from a group consisting of titanium, aluminum, niobium, tungsten, tantalum, cobalt, ruthenium, and molybdenum;
- removing organic components of the metal infiltrated layer thereby forming a metal seed layer on the silicon germanium layer disposed at the bottom surface of the recessed feature;
- and
- depositing a bulk metal layer directly on the metal seed layer employing a cyclical deposition process, wherein the bulk metal layer fills the recessed feature without the formation of a seam.
4 more elements
Dependencies are inferred from the claim text.