Power module having a multi-level lead frame

A power module, comprising:

• a first substrate comprising a patterned first metallization;
• a second substrate comprising a patterned second metallization that faces the patterned first metallization;
• a first plurality of vertical power transistor dies having a drain pad attached to a first part of the patterned first metallization and a source pad electrically connected to a first part of the patterned second metallization;
• a second plurality of vertical power transistor dies having a drain pad attached to a second part of the patterned first metallization and a source pad electrically connected to a second part of the patterned second metallization;
• and
• a multi-level lead frame between the first substrate and the second substrate and attached to each of the first part of the patterned first metallization, the first part of the patterned second metallization, the second part of the patterned first metallization, and the second part of the patterned second metallization.

A power module, comprising:

• a first substrate comprising a patterned first metallization;
• a second substrate comprising a patterned second metallization that faces the patterned first metallization;
• a first plurality of vertical power transistor dies forming a low-side switch of a half bridge and having a drain pad attached to a first part of the patterned first metallization and a source pad electrically connected to a first part of the patterned second metallization;
• a second plurality of vertical power transistor dies forming a high-side switch of the half bridge and having a drain pad attached to a second part of the patterned first metallization and a source pad electrically connected to a second part of the patterned second metallization;
• and
• a multi-level lead frame attached to both the patterned first metallization and the patterned second metallization and providing a low-side current path, a high-side current path, and a phase current path to the half bridge.