Semiconductor device with volumetrically-expanded side-connected interconnects

A method of making a semiconductor device assembly, comprising:

• providing a first semiconductor die including:
• a first layer of dielectric material having a first opening;
• and
• a first reservoir of conductive material located adjacent to the first opening;
• providing a second semiconductor die including:
• a second layer of dielectric material having a second opening corresponding to the first opening;
• and
• a second reservoir of conductive material located adjacent to the second opening;
• aligning the first semiconductor die and the second semiconductor die such that the first opening aligns with the second opening to create an interconnect opening;
• and
• heating the first reservoir of conductive material and the second reservoir of conductive material configured to cause the first reservoir of conductive material and the second reservoir of conductive material to volumetrically expand through the interconnect opening past one another such that a non-horizontal surface of the first reservoir of conductive material contacts a non-horizontal surface of the second reservoir of conductive material to form an interconnect electrically coupling the first semiconductor die and the second semiconductor die.