Method of filling gaps between dies using silicon dioxide
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang Chang, Kuang-Wei Cheng, Ku-Feng Yang
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Abstract
A method of forming an IC structure includes bonding a first die to a first side of a substrate and bonding a second die to the first side of the substrate. The second die is adjacent to the first die and a gap is defined between the first and second dies. The method includes forming a first dielectric layer (DL) over the first and second dies and in the gap, forming a first opening in the first DL in the gap, forming a second DL over the first DL and in the first opening. The first DL includes a higher film stress in absolute value than the second DL.
Claims20
A method of forming an integrated circuit structure, the method comprising:
- bonding a first die to a first side of a semiconductor substrate;
- bonding a second die to the first side of the semiconductor substrate, the second die being adjacent to the first die and a gap being defined between the first die and second die;
- forming a first dielectric layer over the first and second dies and in the gap;
- forming a first opening in the first dielectric layer in the gap;
- and
- forming a second dielectric layer over the first dielectric layer and in the first opening, wherein the first dielectric layer comprises a higher film stress in absolute value than the second dielectric layer.
A method of forming an integrated circuit structure, the method comprising:
- bonding a first die to a first side of a semiconductor substrate;
- bonding a second die to the first side of the semiconductor substrate, the second die being adjacent to the first die and a space being defined between the first die and second die;
- forming a first dielectric layer over the first and second dies and in the space;
- forming a first opening in the first dielectric layer in the space;
- and
- forming a second dielectric layer over the first dielectric layer and in the first opening, wherein the first dielectric layer is thicker than the second dielectric layer in the space.
An integrated circuit structure, comprising:
- a first die bonded to a first side of a first substrate;
- a dummy die bonded to the first side of the first substrate, a space being defined between the first die and the dummy die;
- and
- a plurality of dielectric layers filling the space, wherein each layer of the plurality of layers includes silicon dioxide and a bottommost dielectric layer has a higher density than each of other dielectric layers in the space.
Dependencies are inferred from the claim text.