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US 12,707,998 B2Granted
Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorFumiyoshi Kawashiro
Life of this patent
Estimating the term…
Abstract
According to one embodiment, there is provided a semiconductor device including a chip, a drain electrode arranged on a first surface of the chip, a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a front surface on a device bottom surface, a gate electrode having a front surface on the device bottom surface, and a wire connecting a first region of the gate electrode to a second region on the second surface of the chip.
Claims8
A semiconductor device comprising:
- a chip;
- a drain electrode arranged on a first surface of the chip;
- a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a front surface on a device bottom surface;
- a gate electrode having a front surface on the device bottom surface;
- and
- a wire connecting a first region of the gate electrode to a second region on the second surface of the chip, wherein
- the drain electrode and the gate electrode are formed with a single lead frame with a dented head, and
- the first region of the gate electrode is located at an inner surface of the dented head.
5 more elements
A semiconductor device comprising:
- a chip;
- a drain electrode arranged on a first surface of the chip;
- a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a connection portion and an external exposed portion, the connection portion being connected to the second surface, the external exposed portion being exposed on a side opposite to the connection portion;
- a gate electrode being formed by bending a plate-like metal member;
- and
- a wire connecting a first region of the gate electrode to a second region on the second surface of the chip, wherein
- the drain electrode and the gate electrode are formed with a single lead frame with a dented head, and
- the first region of the gate electrode is located at an inner surface of the dented head.
5 more elements
Dependencies are inferred from the claim text.