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US 12,707,971 B2Granted
Transistor-scale thermoelectric devices for refrigeration of integrated circuits
AssigneeIntel Corporation
InventorsAbhishek Anil Sharma, Wilfred Gomes
Life of this patent
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Abstract
Thermoelectric (TE) devices and their manufacture on integrated circuit (IC) dies to improve thermal performance. An IC die may include a substrate with transistors on one side, a heat spreader on a second side, and a TE device between them. The TE device may have TE elements with similar dimensions as transistor features. An IC die with transistor circuitry blocks in multiple areas of an IC die may include TE devices between each of the transistor circuitry blocks and a heat spreader.
Claims11
A system, comprising:
- a first circuitry block in a first area of an integrated circuit (IC) die, wherein the first circuitry block comprises a plurality of first transistor structures, wherein the first transistor structures comprise channel portions within first fins extending from a first side of a substrate;
- a second circuitry block in a second area of the IC die, wherein the second circuitry block comprises a plurality of second transistor structures, wherein the second transistor structures comprise channel portions within second fins extending from the first side of the substrate;
- a heat spreader over a second side of the substrate, the heat spreader extending between the first area of the IC die and the second area of the IC die;
- and
- a first thermoelectric (TE) device between the first fins and the heat spreader and a second TE device between the second fins and the heat spreader, wherein the first and second TE devices each comprise series connected alternating TE elements having a lateral pitch no more than five times larger than a lateral pitch of the first or second fins.
2 more elements
Dependencies are inferred from the claim text.