Semiconductor device

A semiconductor device comprising:

• a connection pad;
• and
• a first bump and a second bump disposed on the connection pad, the first bump being spaced apart from the second bump,
• wherein the first bump includes a first lower conductive layer in contact with the connection pad and a first upper conductive layer on the first lower conductive layer,
• the second bump includes a second lower conductive layer in contact with the connection pad and a second upper conductive layer on the second lower conductive layer,
• the first upper conductive layer includes a tin (Sn)-silver (Ag) alloy, and
• the second upper conductive layer includes at least one of a nickel (Ni)-tin (Sn) alloy and a copper (Cu)-tin (Sn) alloy.

A semiconductor device comprising:

• a first connection pad and a second connection pad spaced apart from the first connection pad;
• a plurality of first bumps disposed on the first connection pad and the second connection pad, each of the plurality of first bumps including a first lower conductive layer in contact with the first connection pad or the second connection pad and a first upper conductive layer on the first lower conductive layer;
• and
• a second bump disposed on the first connection pad, and including a second lower conductive layer in contact with the first connection pad and a second upper conductive layer on the second lower conductive layer,
• wherein each of the plurality of first bumps has a first height and the second bump has a second height, the second height being lower than the first height.