Defect engineering in wide bandgap perovskites for efficient and stable fully textured perovskite-silicon tandem solar cells
AssigneeThe University of North Carolina at Chapel Hill
InventorsJinsong Huang, Guang Yang
Life of this patent
Estimating the term…
Abstract
Described herein are perovskite ink solutions comprising a composition of Formula I (APbI3-zBrz), a tribromide salt, and a solvent, wherein z is defined herein. Further described are perovskite films prepared using the ink solutions, methods for preparing the perovskite films, and use of the films in wide band gap single junction and tandem solar cells. As shown herein, solar cells fabricated using the perovskite films prepared from ink solutions comprising a tribromide salt achieve enhanced efficiency compared to solar cells comprising a perovskite film prepared without the tribromide salt.
Claims14
An ink solution, comprising:
- (i) a perovskite precursor composition of Formula I:
- APbI3-zBrz (I),
- wherein,
- A is a cation selected from the group consisting of methylammonium (MA), tetramethylammonium (TMA), formamidinium (FA), cesium (Cs), rubidium (Rb), potassium (K), sodium (Na), butylammonium (BAH), phenethylammonium (PEA), phenylammonium (PHA), and guanidinium (GU), or a combination thereof;
- and
- z is between 0.01 and 1.0;
- (ii) a tribromide salt;
- and
- (iii) a solvent.
Dependencies are inferred from the claim text.