Light-transmissive multilayer structure comprising a barrier structure arranged between a substrate and an electrode structure for optoelectronic devices

A light-transmissive multilayer structure for an optoelectronic device, the light-transmissive multilayer structure comprising:

• a substrate,
• an electrode structure, and
• a barrier structure arranged between the substrate and the electrode structure,
• wherein the barrier structure comprises barrier layers arranged in a barrier stack, the barrier stack comprising a backing layer (A) adjacent to the substrate, a buffer layer (C) adjacent to the electrode structure, and a blocking layer (B) arranged between the backing layer (A) and the buffer layer (C),
• wherein the electrode structure comprises electrode layers arranged in an electrode stack, the electrode stack comprising a dielectric layer (E), and a metallic layer (D) arranged between the buffer layer (C) of the barrier structure and the dielectric layer (E);
• wherein the buffer layer (C) comprises at least one material selected from a group consisting of TiOx, ZrO2, Nb2O5, TeO2 and ZnS, wherein all materials of the buffer layer (C) have a refractive index value in a range from 2.2 to 2.6, and wherein a total thickness of the buffer layer (C) is from 10 to 60 nm,
• wherein the metallic layer (D) comprises silver (Ag) and at least one metal selected from a group consisting of Al, Cu, Ti, Ge, Zn and Cr, and
• wherein the layers (A)-(E) are directly adjacent to each other.