Display device

A display device comprising:

• a flexible substrate including an active area and a bending area;
• a first thin film transistor on the active area, the first thin film transistor including a first semiconductor layer;
• a second thin film transistor spaced apart from the first thin film transistor in the active area, the second thin film transistor including a second semiconductor layer;
• an upper interlayer dielectric film on the first semiconductor layer and the second semiconductor layer;
• a lower storage electrode between the flexible substrate and the upper interlayer dielectric film;
• an upper storage electrode between the lower storage electrode and the upper interlayer dielectric film;
• a first planarization layer on the upper interlayer dielectric film, the first planarization layer extending to the bending area of the flexible substrate;
• a pixel connection electrode on the first planarization layer in active area, the pixel connection electrode electrically connected to the second thin film transistor;
• a second planarization layer on the first planarization layer, the second planarization layer covering the pixel connection electrode;
• an organic light-emitting device including an anode electrode that is connected to the pixel connection electrode, a light-emitting stack on the anode electrode, and a cathode electrode on the light-emitting stack;
• a signal link between the first planarization layer and the second planarization layer in the bending area, the signal link including a same material as the pixel connection electrode;
• and
• a light blocking layer between the flexible substrate and the second semiconductor layer of the second thin film transistor,
• wherein the lower storage electrode and the upper storage electrode are spaced apart from the first thin film transistor, the second thin film transistor, and the light blocking layer, and
• wherein the upper storage electrode is on a same layer as the light blocking layer, and
• wherein a storage supply line electrically connected to the upper storage electrode is disposed on a same layer as a source electrode and a drain electrode of the second thin film transistor.