Semiconductor devices and methods of manufacture
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung University
InventorsHsin-Yuan Chiu, Tzu-Ang Chao, Gregory Michael Pitner, Matthias Passlack, Chao-Hsin Chien, Han Wang
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Abstract
A device includes a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region, a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube, a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube and a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.
Claims20
A device, comprising:
- a substrate;
- a carbon nanotube over the substrate having source/drain regions and a channel region between the source/drain regions;
- band-edge shift inducing layers respectively in contact with the source/drain regions of the carbon nanotube, wherein valence bands in the source/drain regions of the carbon nanotube are shifted from valence band edges in the channel region of the carbon nanotube;
- a gate structure over the channel region of the carbon nanotube;
- and
- an auxiliary band-edge shift inducing layer in contact with a source/drain extension region of the carbon nanotube, wherein the source/drain extension region is between the channel region and one of the source/drain regions.
A device, comprising:
- a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region;
- a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube;
- a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube;
- and
- a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.
A method, comprising:
- forming a carbon nanotube over a substrate;
- forming a first metal oxide layer over and a second metal oxide layer over source/drain regions of the carbon nanotube;
- and
- forming a gate structure over a channel region of the carbon nanotube and between the first metal oxide layer and the second metal oxide layer.
Dependencies are inferred from the claim text.